Datasheet4U Logo Datasheet4U.com

PTFA080551E - Thermally-Enhanced High Power RF LDMOS FETs

Description

The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs designed for EDGE and CDMA power amplifier applications in the 869 to 960 MHz band.

Features

  • include input matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA080551E Package H-36265-2 PTFA080551F Package H-37265-2 Three-carrier CDMA2000 Performance VDD = 28 V, IDQ = 450 mA, ƒ = 960 MHz Features.
  • -35 -40 -45 Broadband internal matching Typical EDGE performance - Average output power = 26 W - Gain = 18 dB - Effi.

📥 Download Datasheet

Datasheet Details

Part number PTFA080551E
Manufacturer Infineon
File Size 254.38 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA080551E Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PTFA080551E Thermally-Enhanced High Power RF LDMOS FETs Wolfspeed
PTFA080551F Thermally-Enhanced High Power RF LDMOS FETs Wolfspeed
PTFA Plug Type Fixed Attenuator OPLINK
PTFA142401EL Thermally-Enhanced High Power RF LDMOS FET Infineon Technologies
PTFA142401FL Thermally-Enhanced High Power RF LDMOS FET Infineon Technologies

Other Datasheets by Infineon

Part Number Description
PTFA080551F Thermally-Enhanced High Power RF LDMOS FETs
PTFA081501E Thermally-Enhanced High Power RF LDMOS FETs
PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs
PTFA082201E Thermally-Enhanced High Power RF LDMOS FETs
PTFA082201F Thermally-Enhanced High Power RF LDMOS FETs

Full PDF Text Transcription

Click to expand full text
PTFA080551E PTFA080551F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz Description The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs designed for EDGE and CDMA power amplifier applications in the 869 to 960 MHz band. Features include input matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
Published: |