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PTFA081501F - Thermally-Enhanced High Power RF LDMOS FETs

Download the PTFA081501F datasheet PDF. This datasheet also covers the PTFA081501E variant, as both devices belong to the same thermally-enhanced high power rf ldmos fets family and are provided as variant models within a single manufacturer datasheet.

Description

The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultralinear applications.

They are characaterized for CDMA and CDMA2000 operation from 864 to 900 MHz.

Thermally-enhanced packages provide the coolest operation available.

Features

  • Adjacent Channel Power Ratio (dBc) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical CDMA2000 performance at 900 MHz, 28 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power =.
  • 50 dBc Typical CW performance, 900 MHz, 28 V - Output power at P.
  • 1dB = 165 W - Efficiency = 62% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, l.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFA081501E_Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFA081501F
Manufacturer Infineon
File Size 278.83 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA081501F Datasheet

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Full PDF Text Transcription

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PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultralinear applications. They are characaterized for CDMA and CDMA2000 operation from 864 to 900 MHz. Thermally-enhanced packages provide the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.
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