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ISC16DP15LM - MOSFET

Description

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Features

  • P-Channel.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • 100% avalanche tested.
  • Logic Level.
  • Enhancement mode.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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Datasheet Details

Part number ISC16DP15LM
Manufacturer Infineon
File Size 1.21 MB
Description MOSFET
Datasheet download datasheet ISC16DP15LM Datasheet
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Full PDF Text Transcription

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ISC16DP15LM MOSFET OptiMOSTMPower-Transistor,-150V Features •P-Channel •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •LogicLevel •Enhancementmode •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS -150 V RDS(on),max 160 mΩ ID -22 A SuperSO8 8 7 65 56 78 1 23 4 4321 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode ISC16DP15LM Package PG-TDSON-8 Marking 16DP15LM RelatedLinks - Final Data Sheet 1 Rev.2.0,2022-10-07 OptiMOSTMPower-Transistor,-150V ISC16DP15LM TableofContents Description . . . . . . . . . . . . .
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