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ISC130N20NM6 - 200V MOSFET

Description

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Features

  • N-channel, normal level.
  • Very low on-resistance RDS(on).
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low reverse recovery charge (Qrr).
  • 175°C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21.
  • MSL 1 classified according to J-STD-020.
  • 100% avalanche tested Product validation Fully qualified according to JEDEC for Industrial.

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Datasheet preview – ISC130N20NM6

Datasheet Details

Part number ISC130N20NM6
Manufacturer Infineon
File Size 1.04 MB
Description 200V MOSFET
Datasheet download datasheet ISC130N20NM6 Datasheet
Additional preview pages of the ISC130N20NM6 datasheet.

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Full PDF Text Transcription

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ISC130N20NM6 MOSFET OptiMOSTM6Power-Transistor,200V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •MSL1classifiedaccordingtoJ-STD-020 •100%avalanchetested Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 200 V RDS(on),max 13.
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