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IQE046N08LM5CG
MOSFET
OptiMOSTM5Power-Transistor,80V
Features
•OptimizedforhighperformanceSMPS,e.g.synchronousrectification •N-channel,logiclevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
80
V
RDS(on),max@10V
4.6
mΩ
RDS(on),max@4.5V
5.9
mΩ
ID
99
A
Qoss
39
nC
QG(0V...4.5V)
19
nC
PG-TTFN-9
5 67 8 9
432 1
Drain Pin 5-8
Gate Pin 9
Source Pin 1-4
Type/OrderingCode IQE046N08LM5CG
Package PG-TTFN-9
Marking 046N8C5
RelatedLinks -
Final Data Sheet
1
Rev.2.