IPW95R130PFD7 - MOSFET

Description

Features

Integrated ultra-fast body diode.
Best-in-class reverse recovery charge Qrr.
Best-in-class FOM RDS(on).
Eoss, reduced Qg, Ciss, and Coss.
Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V.
Integrated fast body diode.
Best-in-class CoolMOS™ quality and reliability.
Fully optimized portfolio.
Best-in-class RDS(on) in THD and SMD packages.
ESD protection min. Class 2 (HBM) Benefits.
Ex.

Infineon

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Datasheet Details

Part number	IPW95R130PFD7
Manufacturer	Infineon
File Size	1.31 MB
Description	MOSFET
Datasheet	IPW95R130PFD7 Datasheet
Additional preview pages of the IPW95R130PFD7 datasheet.

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Full PDF Text Transcription

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IPW95R130PFD7 MOSFET 950VCoolMOSªPFD7SJPowerDevice Thelatest950VCoolMOS™PFD7seriessetsanewbenchmarkinthe superjunction(SJ)technologies.Thistechnologyisdesignedtoaddress LightingandIndustrialSMPSapplicationsbycombiningbest-in-class performancewithstate-of-the-arteaseofuse.Comparedtothe CoolMOS™P7families,thePFD7offersanintegratedultra-fastbody diodeenablingusageinresonanttopologieswithmarketslowestreverse recoverycharge(Qrr). Features •Integratedultra-fastbodydiode •Best-in-classreverserecoverychargeQrr •Best-in-classFOMRDS(on)*Eoss,reducedQg,Ciss,andCoss •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.

Published: Dec 2, 2024 |