IPW60R024P7 - Power Transistor

Datasheet Summary

Description

Features

Suitable for hard and soft switching (PFC and LLC) due to an outstanding  commutation ruggedness.
Significant reduction of switching and conduction losses.
Excellent ESD robustness >2kV (HBM) for all products.
Better RDS(on)/package products compared to competition enabled by a  low RDS(on).
A (below 1Ohm.
mm²) Benefits.
Ease of use and fast design-in through low ringing tendency and usage  across PFC and PWM stages.
Simplified ther.

Infineon

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Datasheet Details

Part number	IPW60R024P7
Manufacturer	Infineon
File Size	1.34 MB
Description	Power Transistor
Datasheet	IPW60R024P7 Datasheet
Additional preview pages of the IPW60R024P7 datasheet.

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Full PDF Text Transcription

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IPW60R024P7 MOSFET 600VCoolMOSªP7PowerTransistor TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody diodeagainsthardcommutationandexcellentESDcapability. Furthermore,extremelylowswitchingandconductionlossesmake switchingapplicationsevenmoreefficient,morecompactandmuch cooler.

Published: Oct 28, 2021 |