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IPW60R041C6 - N-Channel MOSFET

Datasheet Summary

Features

  • Static drain-source on-resistance: RDS(on)≤41mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number IPW60R041C6
Manufacturer INCHANGE
File Size 238.18 KB
Description N-Channel MOSFET
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isc N-Channel MOSFET Transistor IPW60R041C6 IIPW60R041C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤41mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 77.5 IDM Drain Current-Single Pulsed 272 PD Total Dissipation @TC=25℃ 481 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.26 62 UNIT ℃/W ℃/W isc website：www.
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