IPW50R190CE - MOSFET

Features

Extremely low losses due to very low FOM Rdson.
Qg and Eoss.
Very high commutation ruggedness.
Easy to use/drive.
Pb-free plating, Halogen free mold compound.
Qualified for industrial grade.

Infineon

Datasheet Details

Part number	IPW50R190CE
Manufacturer	Infineon
File Size	1.82 MB
Description	MOSFET
Datasheet	IPW50R190CE Datasheet
Additional preview pages of the IPW50R190CE datasheet.

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Full PDF Text Transcription

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IPW50R190CE,IPP50R190CE MOSFET 500VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation whilerepresentingacostappealingalternativecomparedtostandard MOSFETsintargetapplications.Theresultingdevicesprovideallbenefits ofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse. Extremelylowswitchingandconductionlossesmakeswitching applicationsevenmoreefficient,morecompact,lighterandcooler.

Published: Mar 2, 2016 |