IPT017N12NM6 - 120V MOSFET

Description

Features

N-channel, normal level.
Very low on-resistance RDS(on).
Excellent gate charge x RDS(on) product (FOM).
Very low reverse recovery charge (Qrr).
High avalanche energy rating.
175°C operating temperature.
Optimized for high frequency switching.
Pb-free lead plating; RoHS compliant.
Halogen-free according to IEC61249-2-21.
MSL 1 classified according to J-STD-020 Product validation Fully qualified according t.

Infineon

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Datasheet Details

Part number	IPT017N12NM6
Manufacturer	Infineon
File Size	957.47 KB
Description	120V MOSFET
Datasheet	IPT017N12NM6 Datasheet
Additional preview pages of the IPT017N12NM6 datasheet.

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Full PDF Text Transcription

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IPT017N12NM6 MOSFET OptiMOSTM6Power-Transistor,120V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitching •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •MSL1classifiedaccordingtoJ-STD-020 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 120 V RDS(on),max 1.

Published: May 13, 2025 |