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IPT012N06N
MOSFET
OptiMOSTMPower-Transistor,60V
Features
•100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
1.2
mΩ
ID
313
A
Qoss
119
nC
QG(0V..10V)
106
nC
HSOF Tab
12345 678
Drain Tab
Gate Pin 1
Source Pin 2-8
Type/OrderingCode IPT012N06N
Package PG-HSOF-8
Marking 012N06N
RelatedLinks -
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.1,2019-07-15
OptiMOSTMPower-Transistor,60V
IPT012N06N
TableofContents
Description . . . . . . . . .