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IPT012N08N5 Final datasheet
MOSFET
OptiMOS™ 5 Power‑Transistor, 80 V
Features
• Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) product (FOM) • Very low on‑resistance RDS(on) • N‑channel, normal level • 100% avalanche tested • Pb‑free plating; RoHS compliant • Qualified according to JEDECJ‑STD20 and JESD22 for target applications • Halogen‑free according to IEC61249‑2‑21
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC JESD47, JESD22 and J‑STD‑020.
Table 1 Parameter VDS RDS(on),max ID Qoss QG(0V..10V)
Key performance parameters
Value
Unit
80
V
1.
IPT012N08N5 Datasheet
