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IPT015N10NF2S Final datasheet
MOSFET
StrongIRFET™ 2 Power‑Transistor, 100 V
Features
• Optimized for a wide range of applications • N‑Channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21
Product validation
Qualified for applications according to the test conditions in the relevant tests of JEDEC JESD22 and J‑STD‑020.
Table 1 Parameter VDS RDS(on),max ID Qoss QG
Key performance parameters
Value
Unit
100
V
1.5
mΩ
315
A
204
nC
161
nC
TOLL
Tab Tab
12 345 6 78
8 7 65 4 32
1
Drain Tab
Gate Pin 1
Source Pin 2-8
Part number IPT015N10NF2S
Package PG‑HSOF‑8
Marking 015N10NS
Related links ‑
Datasheet
https://www.infineon.com
1
Revision 2.