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Type
IPD090N03L G IPS090N03L G
IPF090N03L G IPU090N03L G
OptiMOS®3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant IPD090N03L G Type • Avalanche rated • Pb-free plating; RoHS compliant IPF090N03L G
1)
Product Summary V DS R DS(on),max ID 30 9 40 V mΩ A
IPS090N03L G
IPU090N03L G
Package Marking
PG-TO252-3-11 090N03L
PG-TO252-3-23 090N03L
PG-TO251-3-11 090N03L
PG-TO251-3-21 090N03L
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C
IPS090N03LG Datasheet
