IPS06N03LZG
Features
- Ideal for high-frequency dc/dc converters
- Qualified according to JEDEC1) for target applications
- N-channel, logic level
- Excellent gate charge x R DS(on) product (FOM)
- Superior thermal resistance
- 175 °C operating temperature
- Pb-free lead plating; Ro HS pliant
IPD06N03LZ G IPS06N03LZ G IPU06N03LZ G
Product Summary V DS R DS(on),max (SMD Version) ID
25 V 5.0 mΩ 50 A
Type
IPD06N03LZ
IPS06N03LZ
IPU06N03LZ
Package Marking
P-TO252-3-11 06N03LZ
P-TO251-3-11 06N03LZ
P-TO251-3-21 06N03LZ
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C3)
Avalanche energy, single pulse
E AS I D=45 A, R GS=25 Ω
Reverse diode dv /dt dv /dt
I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage...
