IPS06N03LZG - Power-Transistor

Datasheet Summary

Features

Ideal for high-frequency dc/dc converters.
Qualified according to JEDEC1) for target.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IPS06N03LZG
Manufacturer	Infineon
File Size	495.61 KB
Description	Power-Transistor
Datasheet	IPS06N03LZG Datasheet
Additional preview pages of the IPS06N03LZG datasheet.

📁 Similar Datasheet

IPS06N03LA - OptiMOS 2 Power-Transistor (Infineon Technologies AG)
IPS06N03LAG - Power-Transistor (Infineon Technologies)
IPS060N03LG - Power-Transistor (Infineon Technologies)
IPS0151 - FULLY PROTECTED POWER MOSFET SWITCH (International Rectifier)
IPS0151S - FULLY PROTECTED POWER MOSFET SWITCH (International Rectifier)
IPS021 - FULLY PROTECTED POWER MOSFET SWITCH (International Rectifier)
IPS021L - FULLY PROTECTED POWER MOSFET SWITCH (International Rectifier)
IPS021S - FULLY PROTECTED POWER MOSFET SWITCH (International Rectifier)
IPS022G - DUAL FULLY PROTECTED POWER MOSFET SWITCH (International Rectifier)
IPS024G - QUAD FULLY PROTECTED POWER MOSFET SWITCH (International Rectifier)

Other Datasheets by Infineon

IPS031N03L - Power-Transistor
IPS031N03LG - Power-Transistor
IPS040N03L - Power-Transistor
IPS040N03LG - Power-Transistor
IPS04N03LA - Power Transistor
IPS04N03LAG - Power Transistor
IPS075N03L - Power-Transistor
IPS075N03LG - Power-Transistor

Full PDF Text Transcription

Click to expand full text

OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant IPD06N03LZ G IPS06N03LZ G IPU06N03LZ G Product Summary V DS R DS(on),max (SMD Version) ID 25 V 5.

Published: Jun 18, 2018 |