IPS022G Datasheet PDF (DUAL FULLY PROTECTED POWER MOSFET SWITCH) | Download International Rectifier IPS022G

IPS022G - DUAL FULLY PROTECTED POWER MOSFET SWITCH

Description

The IPS022G are fully protected dual low side SMART POWER MOSFETs respectively.

They feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver.

Features

Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E. S. D protection Product Summary Rds(on) V clamp Ishutdown Ton/Toff Package 150mΩ (max) 50V 5A 1.5µs.

Datasheet Details

Part number	IPS022G
Manufacturer	International Rectifier
File Size	95.32 KB
Description	DUAL FULLY PROTECTED POWER MOSFET SWITCH
Datasheet	IPS022G Datasheet
Additional preview pages of the IPS022G datasheet.

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Full PDF Text Transcription

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Data Sheet No.PD60203 IPS022G DUAL FULLY PROTECTED POWER MOSFET SWITCH Features • • • • • Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Product Summary Rds(on) V clamp Ishutdown Ton/Toff Package 150mΩ (max) 50V 5A 1.5µs Description The IPS022G are fully protected dual low side SMART POWER MOSFETs respectively. They feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 5A.

Published: Apr 16, 2005 |