IPP076N12N3G - Power-Transistor

Datasheet Summary

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant; halogen free.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPP076N12N3G
Manufacturer	Infineon
File Size	483.78 KB
Description	Power-Transistor
Datasheet	IPP076N12N3G Datasheet
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Full PDF Text Transcription

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IPI076N12N3 G IPP076N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification 120 V 7.

Published: Dec 15, 2016 |