IPP072N10N3G - Power Transistor

This page provides the datasheet information for the IPP072N10N3G, a member of the IPP072N10N3 Power Transistor family.

Datasheet Summary

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPP072N10N3G
Manufacturer	Infineon
File Size	307.82 KB
Description	Power Transistor
Datasheet	IPP072N10N3G Datasheet
Additional preview pages of the IPP072N10N3G datasheet.

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Full PDF Text Transcription

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IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPI072N10N3 G IPP072N10N3 G 100 V 7.

Published: Oct 29, 2020 |