IPP076N12N3 - N-Channel MOSFET

Datasheet Summary

Features

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Static drain-source on-resistance: RDS(on) ≤7.6mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IPP076N12N3
Manufacturer	INCHANGE
File Size	241.48 KB
Description	N-Channel MOSFET
Datasheet	IPP076N12N3 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IPP076N12N3，IIPP076N12N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.6mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 100 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 188 Tj Max.

Published: Oct 10, 2020 |