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IPC26N12N - MOSFET

Description

N-channel enhancement mode For dynamic characterization refer to the datasheet of IPP048N12N3 G AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883C Die bond: soldered or glu

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Full PDF Text Transcription

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MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC26N12N DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC26N12N 1Description •N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPP048N12N3G •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlSisystem •Passivation:nitride(onlyonedgestructure) PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 120 4.81) 6.6 x 3.
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