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IPC26N10NR - MOSFET

Description

N-channel enhancement mode For dynamic characterization refer to the datasheet of IPP05CN10N G1) AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883C Die bond: soldered or g

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Full PDF Text Transcription

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MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™2PowerMOSTransistorChip IPC26N10NR DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™2PowerMOSTransistorChip IPC26N10NR 1Description •N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPP05CN10NG1) •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlSisystem •Passivation:nitride(onlyonedgestructure) PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 100 5.42) 6.0 x 4.
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