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IPC218N06L3 - MOSFET

Description

N-channel enhancement mode For dynamic characterization refer to the datasheet of IPB016N06L3 G AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883C Die bond: soldered or glu

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Full PDF Text Transcription

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MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC218N06L3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC218N06L3 1Description •N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPB016N06L3G •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitride+imide PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 60 1.61) 5.9 x 3.
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