Datasheet4U Logo Datasheet4U.com

IPA70R360P7S - MOSFET

Description

.

.

.

.

Features

  • Extremely low losses due to very low FOM RDS(on).
  • Qg and RDS(on).
  • Eoss.
  • Excellent thermal behavior.
  • Integrated ESD protection diode.
  • Low switching losses (Eoss).
  • Product validation acc. JEDEC Standard Benefits.
  • Cost competitive technology.
  • Lower temperature.
  • High ESD ruggedness.
  • Enables efficiency gains at higher switching frequencies.
  • Enables high power density designs and small form factors Potenti.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPA028N08N3G Power-Transistor Infineon Technologies
IPA029N06N N-Channel MOSFET INCHANGE
IPA030N10N3 N-Channel MOSFET INCHANGE
IPA030N10N3G Power-Transistor Infineon Technologies
IPA032N06N3 N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IPA70R450P7S MOSFET
IPA70R600P7S MOSFET
IPA70R900P7S 700V MOSFET
IPA029N06N MOSFET
IPA030N10N3 Power-Transistor

Full PDF Text Transcription

Click to expand full text
IPA70R360P7S MOSFET 700VCoolMOSªP7PowerDevice CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,TV,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns.
Published: |