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IPA060N06N - MOSFET

Description

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Features

  • Optimized for high performance SMPS, e. g. sync. rec.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription

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IPA060N06N MOSFET OptiMOSTMPower-Transistor,60V Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 6.0 mΩ ID 45 A QOSS 32 nC QG(0V..10V) 27 nC TO-220-FP Gate Pin 1 Drain Pin 2 Source Pin 3 Type/OrderingCode IPA060N06N Package PG-TO220-FP Marking 060N06N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.2,2016-08-10 OptiMOSTMPower-Transistor,60V IPA060N06N TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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