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IMYR140R011M2H - 1400V SiC MOSFET

Description

Pin definition: 1 Drain 2 Source 3 Kelvin sense contact 4 Gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Copyright © Infineon Technolo Type IMYR140R011M2H Package PG-TO247-4-U08 Marking 14M2H011 Datashe

Features

  • VDSS = 1400 V at Tvj = 25°C.
  • IDDC = 115 A at TC = 100°C.
  • RDS(on) = 11.5 mΩ at VGS = 18 V, Tvj = 25°C.
  • Very low switching losses.
  • Package backside suitable for reflow soldering at 260°C, 3 times.
  • Overload operation up to Tvj = 200°C.
  • Short circuit withstand time 2 µs.
  • Benchmark gate threshold voltage, VGS(th) = 4.2 V.
  • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
  • Robust body di.

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Datasheet Details

Part number IMYR140R011M2H
Manufacturer Infineon
File Size 1.14 MB
Description 1400V SiC MOSFET
Datasheet download datasheet IMYR140R011M2H Datasheet
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IMYR140R011M2H CoolSiC™ 1400 V SiC MOSFET G2 Final datasheet CoolSiC™ 1400 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology Features • VDSS = 1400 V at Tvj = 25°C • IDDC = 115 A at TC = 100°C • RDS(on) = 11.5 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Package backside suitable for reflow soldering at 260°C, 3 times • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 µs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied • Robust body diode for hard commutation • .
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