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IMYH200R050M1H - 2000V SiC Trench MOSFET

Description

1 drain 2 source 3 Kelvin sense contact 4 gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L) Type IMYH200R050M1H Package PG-TO247-4-PLUS-NT14 Marking 20M1H050 Datasheet www.inf

Features

  • VDSS = 2000 V at Tvj = 25°C.
  • IDCC = 48 A at Tc = 25°C.
  • RDS(on) = 50 mΩ at VGS = 18 V, Tvj = 25°C.
  • Very low switching losses.
  • Benchmark gate threshold voltage, VGS(th) = 4.5 V.
  • Robust body diode for hard commutation.
  • . XT interconnection technology for best-in-class thermal performance 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved. Potential.

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Datasheet Details

Part number IMYH200R050M1H
Manufacturer Infineon
File Size 1.78 MB
Description 2000V SiC Trench MOSFET
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IMYH200R050M1H CoolSiC™ 2000 V SiC Trench MOSFET CoolSiC™ 2000 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology Features • VDSS = 2000 V at Tvj = 25°C • IDCC = 48 A at Tc = 25°C • RDS(on) = 50 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal performance 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved.
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