IMYR140R006M2H - 1400V SiC MOSFET

Description

Pin definition: 1 Drain 2 Source 3 Kelvin sense contact 4 Gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Copyright © Infineon Technolo Type IMYR140R006M2H Package PG-TO247-4-U08 Marking 14M2H006 Datashe

Features

VDSS = 1400 V at Tvj = 25°C.
IDDC = 188 A at TC = 100°C.
RDS(on) = 5.8 mΩ at VGS = 18 V, Tvj = 25°C.
Very low switching losses.
Package backside suitable for reflow soldering at 260°C, 3 times.
Overload operation up to Tvj = 200°C.
Short circuit withstand time 2 µs.
Benchmark gate threshold voltage, VGS(th) = 4.2 V.
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
Robust body dio.

Infineon

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Datasheet Details

Part number	IMYR140R006M2H
Manufacturer	Infineon
File Size	1.14 MB
Description	1400V SiC MOSFET
Datasheet	IMYR140R006M2H Datasheet
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Full PDF Text Transcription

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IMYR140R006M2H CoolSiC™ 1400 V SiC MOSFET G2 Final datasheet CoolSiC™ 1400 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology Features • VDSS = 1400 V at Tvj = 25°C • IDDC = 188 A at TC = 100°C • RDS(on) = 5.8 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Package backside suitable for reflow soldering at 260°C, 3 times • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 µs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied • Robust body diode for hard commutation • .

Published: May 20, 2025 |