IKW50N65ET7 - IGBT

Description

Package pin definition: Pin C & backside - Collector Pin E - Emitter Pin G - Gate C TO-247 3Pin 2021-10-27 restricted Type IKW50N65ET7 G E Package PG-TO247-3 Marking K50EET7 Copyright © Infineon T Datasheet www.infineon.com Please read the sections "I

Features

VCE = 650 V.
IC = 50 A.
Very low VCE,sat.
Low turn-off losses.
Short tail current.
Reduced EMI.
Very soft, fast recovery antiparallel diode.
Maximum junction temperature Tvjmax = 175°C.
Qualified according to JEDEC for target.

Infineon

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Datasheet Details

Part number	IKW50N65ET7
Manufacturer	Infineon
File Size	1.46 MB
Description	IGBT
Datasheet	IKW50N65ET7 Datasheet
Additional preview pages of the IKW50N65ET7 datasheet.

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Full PDF Text Transcription

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IKW50N65ET7 Low loss Duopack: IGBT 7 Low loss Duopack: IGBT 7 with Trench and Fieldstop technology Features • VCE = 650 V • IC = 50 A • Very low VCE,sat • Low turn-off losses • Short tail current • Reduced EMI • Very soft, fast recovery antiparallel diode • Maximum junction temperature Tvjmax = 175°C • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.

Published: Dec 11, 2023 |