IKW50N65F5A - IGBT

Description

Features

C High speed F5 technology offering.
Best-in-Class efficiency in hard switching and resonant topologies.
650V breakdown voltage.
Low gate charge QG.
IGBT copacked with RAPID 1 fast and soft antiparallel diode.
Maximum junction temperature 175°C.
Qualified according to AEC-Q101.
Green package (RoHS compliant).
Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/ G E.

Infineon Technologies

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Datasheet Details

Part number	IKW50N65F5A
Manufacturer	Infineon
File Size	2.07 MB
Description	IGBT
Datasheet	IKW50N65F5A Datasheet
Additional preview pages of the IKW50N65F5A datasheet.

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Full PDF Text Transcription

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IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKW50N65F5A 650VDuoPackIGBTanddiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IKW50N65F5A Highspeedswitchingseriesfifthgeneration Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwith RAPID1fastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •QualifiedaccordingtoAEC-Q101 •Greenpackage(RoHScompliant) •CompleteproductspectrumandPSpiceModels: http://w

Published: Mar 11, 2015 |