IKW50N65ES5 - IGBT

Description

Features

C High speed S5 technology offering.
High speed smooth switching device for hard & soft switching.
Very Low VCEsat, 1.35V at nominal current.
Plug and play replacement of previous generation IGBTs.
650V breakdown voltage.
Low gate charge QG.
IGBT copacked with full rated RAPID 1 fast antiparallel diode.
Maximum junction temperature 175°C.
Qualified according to JEDEC for target.

Infineon

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Datasheet Details

Part number	IKW50N65ES5
Manufacturer	Infineon
File Size	2.02 MB
Description	IGBT
Datasheet	IKW50N65ES5 Datasheet
Additional preview pages of the IKW50N65ES5 datasheet.

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Full PDF Text Transcription

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IGBT TRENCHSTOPTM5highSpeedsoftswitchingIGBTwithfullcurrentratedRAPID1diode IKW50N65ES5 650VTRENCHSTOPTM5highspeedsoftswitchingduopak Datasheet IndustrialPowerControl IKW50N65ES5 TRENCHSTOPTM5softswitchingIGBT TRENCHSTOPTM5highspeedsoftswitchingIGBTcopackedwithfullcurrent ratedRAPID1fastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedS5technologyoffering •Highspeedsmoothswitchingdeviceforhard&softswitching •VeryLowVCEsat,1.

Published: Jan 28, 2016 |