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IDW32G65C5B - Silicon Carbide Diode

Datasheet Summary

Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • Benchmark switching behavior.
  • No reverse recovery/ No forward recovery.
  • Temperature independent switching behavior.
  • High surge current capability.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Datasheet preview – IDW32G65C5B

Datasheet Details

Part number IDW32G65C5B
Manufacturer Infineon
File Size 723.57 KB
Description Silicon Carbide Diode
Datasheet download datasheet IDW32G65C5B Datasheet
Additional preview pages of the IDW32G65C5B datasheet.

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Full PDF Text Transcription

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SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW32G65C5B Final Datasheet Rev. 2.0, 2015-04-13 Power Management & Multimarket 5th Generation thinQ!™ SiC Schottky Diode IDW32G65C5B 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. A combination with a new, more compact design and thinwafer technology results is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
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