Datasheet4U Logo Datasheet4U.com

IDW12G65C5 - SiC Schottky Barrier diodes

Datasheet Summary

Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • Benchmark switching behavior.
  • No reverse recovery/ No forward recovery.
  • Temperature independent switching behavior.
  • High surge current capability.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Datasheet preview – IDW12G65C5

Datasheet Details

Part number IDW12G65C5
Manufacturer Infineon Technologies
File Size 1.14 MB
Description SiC Schottky Barrier diodes
Datasheet download datasheet IDW12G65C5 Datasheet
Additional preview pages of the IDW12G65C5 datasheet.

📁 Similar Datasheet

Other Datasheets by Infineon Technologies

Full PDF Text Transcription

Click to expand full text
SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW12G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ!™ SiC Schottky Diode IDW12G65C5 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
Published: |