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IDW10G120C5B - Silicon Carbide Schottky Diode

Datasheet Summary

Description

Rev.

Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • No reverse recovery current / No forward recovery.
  • Temperature independent switching behavior.
  • Low forward voltage even at high operating temperature.
  • Tight forward voltage distribution.
  • Excellent thermal performance.
  • Extended surge current capability.
  • Specified dv/dt ruggedness.
  • Qualified according to JEDEC1) for target.

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Datasheet preview – IDW10G120C5B

Datasheet Details

Part number IDW10G120C5B
Manufacturer Infineon
File Size 835.31 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet IDW10G120C5B Datasheet
Additional preview pages of the IDW10G120C5B datasheet.

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Full PDF Text Transcription

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Silicon Carbide Schottky Diode IDW10G120C5B 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Final Datasheet Rev. 2.
Published: |