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IAUTN06S5N008T
Automotive MOSFET
OptiMOS™ 5 Power-Transistor
Features
• OptiMOS™ power MOSFET for automotive applications • N-channel – enhancement mode – normal level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% avalanche tested
Potential applications
General automotive applications.
Product validation
Qualified for automotive applications. Product validation according to AEC-Q101.
16 PG-HDSOP-16-1
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Product Summary
VDS RDS(on) ID (chip limited)
60 V 0.79 mΩ 503 A
Type IAUTN06S5N008T
Package PG-HDSOP-16-1
Marking 5N06N008
Data Sheet
Please read the Important Notice and Warnings at the end of this document
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