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IAUTN06S5N008G - Automotive MOSFET

Description

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Features

  • OptiMOS™ power MOSFET for automotive.

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Datasheet preview – IAUTN06S5N008G

Datasheet Details

Part number IAUTN06S5N008G
Manufacturer Infineon
File Size 1.40 MB
Description Automotive MOSFET
Datasheet download datasheet IAUTN06S5N008G Datasheet
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Full PDF Text Transcription

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IAUTN06S5N008G Automotive MOSFET OptiMOS™ 5 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – enhancement mode – normal level 1 • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% avalanche tested Potential applications General automotive applications. Product validation Qualified for automotive applications. Product validation according to AEC-Q101. PG-HSOG-8-1 Tab Tab 8 8 1 Product Summary VDS RDS(on) ID (chip limited) 60 V 0.78 mΩ 504 A Type IAUTN06S5N008G Package PG-HSOG-8-1 Marking 5N06N008 Data Sheet Please read the Important Notice and Warnings at the end of this document www.infineon.
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