IAUT300N08S5N012 - Power Transistor

Features

N-channel - Enhancement mode.
AEC qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green product (RoHS compliant).
Ultra low Rds(on).
100% Avalanche tested Product Summary VDS RDS(on) ID 80 V 1.2 mW 300 A PG-HSOF-8-1 Tab 8 1 Tab 1 8 Type Package IAUT300N08S5N012 PG-HSOF-8-1 Marking 5N08012 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain curre.

Infineon

Datasheet Details

Part number	IAUT300N08S5N012
Manufacturer	Infineon
File Size	306.48 KB
Description	Power Transistor
Datasheet	IAUT300N08S5N012 Datasheet
Additional preview pages of the IAUT300N08S5N012 datasheet.

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Full PDF Text Transcription

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IAUT300N08S5N012 OptiMOS™-5 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Product Summary VDS RDS(on) ID 80 V 1.

Published: Jun 18, 2020 |