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HYE25L256160AC - 256-Mbit Mobile-RAM

Download the HYE25L256160AC datasheet PDF. This datasheet also covers the HYE variant, as both devices belong to the same 256-mbit mobile-ram family and are provided as variant models within a single manufacturer datasheet.

Description

improved “Simplified State Diagram” added relaxed Absolute Maximum Ratings (+0.5/ 1.0 V instead of ±0.3 V relative to VDD/VSS) Note 4: relaxed over-/underswing delta to 2.0 V deleted VDD and VDDQ range above tables and partly replaced by note “(Recommended Operating Conditions unless otherwi

Features

  • . . 4.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HYE-25L25.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Infineon

Part Number Description
HYE25L256160AF 256MBit Mobile-RAM
HYE18L128160BC-75 Specialty DRAMs Mobile-RAM
HYE18L128160BC-75 DRAMs for Mobile Applications
HYE18L128160BF-75 Specialty DRAMs Mobile-RAM
HYE18L128160BF-75 DRAMs for Mobile Applications

Full PDF Text Transcription

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Data Sheet, V1.1, April 2003 HYE25L256160AC 256-Mbit Mobile-RAM Extended Temperature Range Memory Products N e v e r s t o p t h i n k i n g . HYE25L256160AC Revision History: Previous Version: Page all Page 13f Page 15 Page 18 Page 19 Page 20 Page 20 Page 20ff Page 22 Page 23f 2003-04-16 2001-11-23 V1.1 V1.0 Subjects (major changes since last version) applied new data sheet template Din-A4 Temperature Compensated Self Refresh with On-Chip Temperature Sensor Table Operation Definition extended by two rows “Clock Suspend Entry” and “Clock Suspend Exit”; Note 5 extended by “When this command is asserted during a burst cycle the device …” “Self Refresh” description improved “Simplified State Diagram” added relaxed Absolute Maximum Ratings (+0.5/–1.0 V instead of ±0.
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