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BSZ099N06LS5 - 60V MOSFET

Description

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Features

  • Optimized for high performance SMPS, e. g. sync. rec.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Qualified according to JEDEC1) for target.

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BSZ099N06LS5 MOSFET OptiMOSTMPower-Transistor,60V Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 9.9 mΩ ID 46 A QOSS 13 nC QG(0V..4.5V) 7 nC TSDSON-8FL(S3O8) S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSZ099N06LS5 Package PG-TSDSON-8 FL Marking 099N06L RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.4,2020-10-23 OptiMOSTMPower-Transistor,60V BSZ099N06LS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . .
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