SPD26N06S2L-35 - OptiMOS Power-Transistor

Infineon

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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SPD26N06S2L-35 optimos power-transistor by Infineon - Datasheet Preview

Datasheet Details

Part number	SPD26N06S2L-35
Manufacturer	Infineon
File Size	264.47 KB
Description	OptiMOS Power-Transistor
Datasheet	SPD26N06S2L-35 Datasheet

Full PDF Text Transcription for SPD26N06S2L-35 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPD26N06S2L-35. For precise diagrams, and layout, please refer to the original PDF.

SPD26N06S2L-35 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 55 35 30 P- TO252 -3-11 V mΩ A • Enhancement mode • Logic Level • 175°C opera...

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0 P- TO252 -3-11 V mΩ A • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPD26N06S2L-35 Package Ordering Code P- TO252 -3-11 Q67060-S7426 Marking 2N06L35 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C Symbol ID Value 30 22 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 120 80 5 6 ±20 68 -55...

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