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SPD18P06P - SIPMOS Power-Transistor

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Key Features

  • Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature VDS RDS(on) ID -60 0.13 -18.6 V W.
  • A Type SPD18P06P SPU18P06P Package P-TO252 P-TO251 Ordering Code Q67040-S4189 Q67040-S4192 Pin 1 G PIN 2/4 D PIN 3 S Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value -18.6 -13.2 Unit A.

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Full PDF Text Transcription for SPD18P06P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPD18P06P. For precise diagrams, and layout, please refer to the original PDF.

Preliminary data SPD18P06P SPU18P06P SIPMOS ® Power-Transistor Features · Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P...

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ce voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature VDS RDS(on) ID -60 0.13 -18.6 V W · · · · A Type SPD18P06P SPU18P06P Package P-TO252 P-TO251 Ordering Code Q67040-S4189 Q67040-S4192 Pin 1 G PIN 2/4 D PIN 3 S Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value -18.6 -13.2 Unit A ID T C = 25 °C T C = 100 °C Pulsed drain current ID puls EAS EAR dv/dt -74.4 150 8 6 kV/µs mJ T C = 25 °C Avalanche energy, single pulse I D = -18.

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