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SPD11N10 - SIPMOS Power-Transistor

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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Datasheet Details

Part number SPD11N10
Manufacturer Infineon
File Size 493.20 KB
Description SIPMOS Power-Transistor
Datasheet download datasheet SPD11N10 Datasheet

Full PDF Text Transcription for SPD11N10 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPD11N10. For precise diagrams, and layout, please refer to the original PDF.

Preliminary data SPD11N10 SPU11N10 Product Summary VDS RDS(on) ID 100 170 10.5 P-TO252 SIPMOS Power-Transistor Feature  N-Channel  Enhancement mode 175°C operating t...

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-Transistor Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated V A m P-TO251 Type SPD11N10 SPU11N10 Package P-TO252 P-TO251 Ordering Code Q67042-S4121 Q67042-S4122 Marking 11N10 11N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 10.5 7.8 Unit A Pulsed drain current TC=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg 41.2 60 6 ±20 50 -55... +175 55/175/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =10.5 A , VDD =25V, RGS =25 Reverse diode dv/dt IS =10.

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