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SPD07N60C2 - Power Transistor

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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Full PDF Text Transcription for SPD07N60C2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPD07N60C2. For precise diagrams, and layout, please refer to the original PDF.

Final data SPD07N60C2 SPU07N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO-251 and TO-252 • Ultra low...

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technology • Worldwide best R DS(on) in TO-251 and TO-252 • Ultra low gate charge www.DataSheet4U.com Product Summary VDS RDS(on) ID P-TO251 600 0.6 7.3 P-TO252 V Ω A • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity Type SPD07N60C2 SPU07N60C2 Package P-TO252 P-TO251 Ordering Code Q67040-S4312 Q67040-S4311 Marking 07N60C2 07N60C2 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 7.3 4.6 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =5.5A, VDD =50

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