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OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • Logic Level • Automotive AEC Q101 qualified
• Avalanche rated • dv/dt rated
P- TO262 -3-1
SPI80N06S2L-11 SPP80N06S2L-11,SPB80N06S2L-11
Product Summary
VDS 55 V
RDS(on)
11 mΩ
ID 80 A
P- TO263 -3-2
P- TO220 -3-1
Type
Package
Ordering Code
SPP80N06S2L-11 P- TO220 -3-1 Q67060-S6035
SPB80N06S2L-11 P- TO263 -3-2 Q67060-S6036
SPI80N06S2L-11 P- TO262 -3-1 Q67060-S6181
Marking 2N06L11 2N06L11 2N06L11
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC=25°C 1)
ID
TC=100°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt
ID puls
EAS
EAR dv/dt
IS=80A, VDS
SPB80N06S2L-11 Datasheet
