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SPB80P06PG - Power Transistor

Download the SPB80P06PG datasheet PDF. This datasheet also covers the SPB80P06P variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Product Summary.
  • P-Channel.
  • Enhancement mode.
  • Avalanche rated.
  • dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.023 Continuous drain current ID -80 A.
  • 175°C operating temperature ° Pb-free lead plating: RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Type SPB80P06P G Package Lead free PG-TO263-3 Yes Pin 1 PIN 2/4 PIN 3 G D S Maximum Ratings,at Tj = 25 °C, unless otherwis.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SPB80P06P_InfineonTechnologiesAG.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
SPB80P06P Power Transistor Infineon Technologies
SPB80P06P P-Channel MOSFET INCHANGE
SPB80N03 SIPMOS Power Transistor Siemens Semiconductor Group
SPB80N03L Power Transistor Siemens
SPB80N03S2-03 OptiMOS Power-Transistor Infineon Technologies

Other Datasheets by Infineon

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Full PDF Text Transcription

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SPB80P06P G SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.
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