Click to expand full text
SPP04N60S5 SPB04N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
P-TO220-3-1
VDS RDS(on) ID
P-TO263-3-2
600 0.95 4.5
V Ω A
P-TO220-3-1
2
1
23
Type
Package
Ordering Code
SPP04N60S5 SPB04N60S5
P-TO220-3-1 P-TO263-3-2
Q67040-S4200 Q67040-S4201
Marking 04N60S5
04N60S5
Maximum Ratings Parameter
Continuous drain current
TC = 25 °C TC = 100 °C
Symbol
ID
Value
4.5 2.8
Unit
A
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
I D = 3.4 A, VDD = 50 V
I D puls EAS
9 130 0.4 4.5 ±20
±30
mJ
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
I D = 4.
SPB04N60S5 Datasheet
