Datasheet4U Logo Datasheet4U.com

SPB80N06S2L-09 - Power-Transistor

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com SPP80N06S2L-09 SPB80N06S2L-09 Product Summary VDS R DS(on) ID P- TO263 -3-2 OptiMOS® Power-Transistor Feature • N-Channel 55 8.5 80 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N06S2L-09 SPB80N06S2L-09 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6031 Q67060-S6032 Marking 2N06L09 2N06L09 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 73 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 370 19 6 ±20 190 -55...