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IPB08CNE8NG - Power-Transistor

Download the IPB08CNE8NG datasheet PDF. This datasheet also covers the IPB-08CNE variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPB-08CNE-8.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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www.DataSheet4U.com IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO263) ID 85 8.
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