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IPB081N06L3 - Power-Transistor

Download the IPB081N06L3 datasheet PDF. This datasheet also covers the IPB081N06L3G variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Ideal for high frequency switching and sync. rec.
  • Optimized technology for DC/DC converters.
  • Excellent gate charge x R DS(on) product (FOM).
  • N-channel, logic level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPB081N06L3G_InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IPB081N06L3 N-Channel MOSFET INCHANGE
IPB081N06L3G Power-Transistor Infineon Technologies
IPB080N03L N-Channel MOSFET INCHANGE
IPB080N06NG Power-Transistor Infineon Technologies
IPB082N10N3G Power-Transistor Infineon Technologies

Other Datasheets by Infineon

Part Number Description
IPB080N03L Power-Transistor
IPB080N03LG Power-Transistor
IPB083N10N3 Power-Transistor
IPB083N10N3G Power-Transistor
IPB083N15N5LF MOSFET

Full PDF Text Transcription

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Type OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G Product Summary VDS RDS(on),max (SMD) ID 60 V 8.
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