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IPB083N10N3 - Power-Transistor

Download the IPB083N10N3 datasheet PDF. This datasheet also covers the IPB083N10N3G variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 252) ID 100 V 8.2 mW 80 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPB083N10N3G-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
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Other Datasheets by Infineon

Part Number Description
IPB083N10N3G Power-Transistor
IPB083N15N5LF MOSFET
IPB080N03L Power-Transistor
IPB080N03LG Power-Transistor
IPB081N06L3 Power-Transistor

Full PDF Text Transcription

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IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 252) ID 100 V 8.
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