Datasheet4U Logo Datasheet4U.com

IPB08CN10NG - Power-Transistor

Download the IPB08CN10NG datasheet PDF. This datasheet also covers the IPB-08CN variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPB-08CN-10.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IPB080N03L Power-Transistor Infineon
IPB080N03L N-Channel MOSFET INCHANGE
IPB080N03LG Power-Transistor Infineon
IPB081N06L3 Power-Transistor Infineon
IPB081N06L3 N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IPB08CNE8NG Power-Transistor
IPB080N06NG Power-Transistor
IPB081N06L3G Power-Transistor
IPB082N10N3G Power-Transistor
IPB085N06LG Power-Transistor

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com IPB08CN10N G IPI08CN10N G IPP08CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO263) ID 100 8.
Published: |